GA10SICP12-263
GA10SICP12-263
Varenummer:
GA10SICP12-263
Fabrikant:
GeneSiC Semiconductor
Beskrivelse:
TRANS SJT 1200V 25A TO263-7
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
10061 Pieces
Leveringstid:
1-2 days
Datablad:
GA10SICP12-263.pdf

Introduktion

We can supply GA10SICP12-263, use the request quote form to request GA10SICP12-263 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GA10SICP12-263.The price and lead time for GA10SICP12-263 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GA10SICP12-263.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:-
Vgs (Max):-
Teknologi:SiC (Silicon Carbide Junction Transistor)
Leverandør Device Package:D2PAK (7-Lead)
Serie:-
Rds On (Max) @ Id, Vgs:100 mOhm @ 10A
Power Dissipation (Max):170W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Andre navne:1242-1318
GA10SICP12-263-ND
Driftstemperatur:175°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:18 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1403pF @ 800V
FET Type:-
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):-
Afløb til Source Voltage (VDSS):1200V
Detaljeret beskrivelse:1200V 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:25A (Tc)
Email:[email protected]

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