TPS1120DR
Artikelnummer:
TPS1120DR
Hersteller:
TI
Beschreibung:
MOSFET 2P-CH 15V 1.17A 8-SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
19683 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TPS1120DR.pdf

Einführung

We can supply TPS1120DR, use the request quote form to request TPS1120DR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPS1120DR.The price and lead time for TPS1120DR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPS1120DR.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:180 mOhm @ 1.5A, 10V
Leistung - max:840mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:296-1352-2
TPS1120DRG4
TPS1120DRG4-ND
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:12 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:5.45nC @ 10V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):15V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.17A
Basisteilenummer:TPS1120
Email:[email protected]

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