TPS1101DRG4
Artikelnummer:
TPS1101DRG4
Hersteller:
TI
Beschreibung:
MOSFET P-CH 15V 2.3A 8-SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30860 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TPS1101DRG4.pdf

Einführung

We can supply TPS1101DRG4, use the request quote form to request TPS1101DRG4 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPS1101DRG4.The price and lead time for TPS1101DRG4 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPS1101DRG4.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):+2V, -15V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:90 mOhm @ 2.5A, 10V
Verlustleistung (max):791mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:28 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:11.25nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):2.7V, 10V
Drain-Source-Spannung (Vdss):15V
detaillierte Beschreibung:P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.3A (Ta)
Email:[email protected]

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