TPCF8402(TE85L,F,M
TPCF8402(TE85L,F,M
Artikelnummer:
TPCF8402(TE85L,F,M
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N/P-CH 30V 4A/3.2A VS-8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
17964 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TPCF8402(TE85L,F,M.pdf2.TPCF8402(TE85L,F,M.pdf

Einführung

We can supply TPCF8402(TE85L,F,M, use the request quote form to request TPCF8402(TE85L,F,M pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPCF8402(TE85L,F,M.The price and lead time for TPCF8402(TE85L,F,M depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPCF8402(TE85L,F,M.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 1mA
Supplier Device-Gehäuse:VS-8 (2.9x1.5)
Serie:-
Rds On (Max) @ Id, Vgs:50 mOhm @ 2A, 10V
Leistung - max:330mW
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-SMD, Flat Lead
Andere Namen:TPCF8402FDKR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array N and P-Channel 30V 4A, 3.2A 330mW Surface Mount VS-8 (2.9x1.5)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A, 3.2A
Basisteilenummer:TPC*402
Email:[email protected]

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