TPCF8201(TE85L,F,M
TPCF8201(TE85L,F,M
Artikelnummer:
TPCF8201(TE85L,F,M
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET 2N-CH 20V 3A VS-8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
33744 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TPCF8201(TE85L,F,M.pdf2.TPCF8201(TE85L,F,M.pdf

Einführung

We can supply TPCF8201(TE85L,F,M, use the request quote form to request TPCF8201(TE85L,F,M pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPCF8201(TE85L,F,M.The price and lead time for TPCF8201(TE85L,F,M depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPCF8201(TE85L,F,M.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.2V @ 200µA
Supplier Device-Gehäuse:VS-8 (2.9x1.5)
Serie:-
Rds On (Max) @ Id, Vgs:49 mOhm @ 1.5A, 4.5V
Leistung - max:330mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SMD, Flat Lead
Andere Namen:TPCF8201(TE85L,F)
TPCF8201(TE85LFMTR
TPCF8201FTR
TPCF8201FTR-ND
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:590pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 3A 330mW Surface Mount VS-8 (2.9x1.5)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3A
Email:[email protected]

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