TPC6110(TE85L,F,M)
Artikelnummer:
TPC6110(TE85L,F,M)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET P-CH 30V 4.5A VS6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
23933 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TPC6110(TE85L,F,M).pdf2.TPC6110(TE85L,F,M).pdf

Einführung

We can supply TPC6110(TE85L,F,M), use the request quote form to request TPC6110(TE85L,F,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPC6110(TE85L,F,M).The price and lead time for TPC6110(TE85L,F,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPC6110(TE85L,F,M).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 100µA
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:VS-6 (2.9x2.8)
Serie:U-MOSVI
Rds On (Max) @ Id, Vgs:56 mOhm @ 2.2A, 10V
Verlustleistung (max):700mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-23-6 Thin, TSOT-23-6
Andere Namen:TPC6110(TE85LFM)
TPC6110TE85LFM
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:510pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:P-Channel 30V 4.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.5A (Ta)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung