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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > TK14E65W,S1X
TK14E65W,S1X
TK14E65W,S1X
Artikelnummer:
TK14E65W,S1X
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 650V 13.7A TO-220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
44552 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TK14E65W,S1X.pdf
Anfrage

Einführung

We can supply TK14E65W,S1X, use the request quote form to request TK14E65W,S1X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK14E65W,S1X.The price and lead time for TK14E65W,S1X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK14E65W,S1X.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.5V @ 690µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220
Serie:DTMOSIV
Rds On (Max) @ Id, Vgs:250 mOhm @ 6.9A, 10V
Verlustleistung (max):130W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:TK14E65W,S1X(S
TK14E65W,S1X-ND
TK14E65WS1X
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1300pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:13.7A (Ta)
Email:[email protected]

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