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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > TK13E25D,S1X(S
TK13E25D,S1X(S
Artikelnummer:
TK13E25D,S1X(S
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 250V 13A TO-220AB
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
51018 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TK13E25D,S1X(S.pdf2.TK13E25D,S1X(S.pdf
Anfrage

Einführung

We can supply TK13E25D,S1X(S, use the request quote form to request TK13E25D,S1X(S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK13E25D,S1X(S.The price and lead time for TK13E25D,S1X(S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK13E25D,S1X(S.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.5V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220-3
Serie:-
Rds On (Max) @ Id, Vgs:250 mOhm @ 6.5A, 10V
Verlustleistung (max):102W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:TK13E25DS1X(S
TK13E25DS1XS
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):250V
detaillierte Beschreibung:N-Channel 250V 13A (Ta) 102W (Tc) Through Hole TO-220-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:13A (Ta)
Email:[email protected]

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