TH58BYG2S3HBAI4
Artikelnummer:
TH58BYG2S3HBAI4
Hersteller:
Toshiba Memory America, Inc.
Beschreibung:
4G SLC NAND BGA 24NM
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
9913 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TH58BYG2S3HBAI4.pdf

Einführung

We can supply TH58BYG2S3HBAI4, use the request quote form to request TH58BYG2S3HBAI4 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TH58BYG2S3HBAI4.The price and lead time for TH58BYG2S3HBAI4 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TH58BYG2S3HBAI4.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Schreibzyklus Zeit - Wort, Seite:-
Spannungsversorgung:-
Technologie:FLASH - NAND (SLC)
Supplier Device-Gehäuse:63-TFBGA (9x11)
Serie:Benand™
Verpackung / Gehäuse:63-VFBGA
Betriebstemperatur:-40°C ~ 85°C
Befestigungsart:Surface Mount
Speichertyp:Non-Volatile
Speichergröße:4Gb (512M x 8)
Speicherschnittstelle:-
Speicherformat:FLASH
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) 63-TFBGA (9x11)
Email:[email protected]

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