SSM6N7002BFE,LM
SSM6N7002BFE,LM
Artikelnummer:
SSM6N7002BFE,LM
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET 2N-CH 60V 0.2A ES6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
57196 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.SSM6N7002BFE,LM.pdf2.SSM6N7002BFE,LM.pdf

Einführung

We can supply SSM6N7002BFE,LM, use the request quote form to request SSM6N7002BFE,LM pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM6N7002BFE,LM.The price and lead time for SSM6N7002BFE,LM depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM6N7002BFE,LM.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.1V @ 250µA
Supplier Device-Gehäuse:ES6
Serie:-
Rds On (Max) @ Id, Vgs:2.1 Ohm @ 500mA, 10V
Leistung - max:150mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-563, SOT-666
Andere Namen:SSM6N7002BFE,LM(B
SSM6N7002BFE,LM(T
SSM6N7002BFELMTR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:17pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 60V 200mA 150mW Surface Mount ES6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200mA
Email:[email protected]

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