SSM6N58NU,LF
SSM6N58NU,LF
Artikelnummer:
SSM6N58NU,LF
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET 2N-CH 30V 4A UDFN6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
16028 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SSM6N58NU,LF.pdf

Einführung

We can supply SSM6N58NU,LF, use the request quote form to request SSM6N58NU,LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM6N58NU,LF.The price and lead time for SSM6N58NU,LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM6N58NU,LF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 1mA
Supplier Device-Gehäuse:6-UDFN (2x2)
Serie:-
Rds On (Max) @ Id, Vgs:84 mOhm @ 2A, 4.5V
Leistung - max:1W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-WDFN Exposed Pad
Andere Namen:SSM6N58NU,LF(B
SSM6N58NU,LF(T
SSM6N58NULF
SSM6N58NULFTR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:129pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:1.8nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate, 1.8V Drive
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface Mount 6-UDFN (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung