SSM3J56ACT,L3F
SSM3J56ACT,L3F
Artikelnummer:
SSM3J56ACT,L3F
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET P-CH 20V 1.4A CST3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
6347 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SSM3J56ACT,L3F.pdf

Einführung

We can supply SSM3J56ACT,L3F, use the request quote form to request SSM3J56ACT,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM3J56ACT,L3F.The price and lead time for SSM3J56ACT,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM3J56ACT,L3F.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 1mA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:CST3
Serie:U-MOSVI
Rds On (Max) @ Id, Vgs:390 mOhm @ 800mA, 4.5V
Verlustleistung (max):500mW (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SC-101, SOT-883
Andere Namen:SSM3J56ACTL3FCT
Betriebstemperatur:150°C
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:1.6nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.2V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.4A (Ta)
Email:[email protected]

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