Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 3.9V @ 80µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | PG-TO263-3-2 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Verlustleistung (max): | 25W (Tc) |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andere Namen: | SP000013516 SPB02N60C3 SPB02N60C3ATMA1TR SPB02N60C3INTR SPB02N60C3INTR-ND SPB02N60C3XT SPB02N60C3XT-ND |
Betriebstemperatur: | -55°C ~ 150°C (TJ) |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Typ FET: | N-Channel |
FET-Merkmal: | - |
Antriebsspannung (Max Rds On, Min Rds On): | 10V |
Drain-Source-Spannung (Vdss): | 650V |
detaillierte Beschreibung: | N-Channel 650V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2 |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 1.8A (Tc) |
Email: | [email protected] |