Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 3.9V @ 80µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | PG-TO263-3-2 |
Seri: | CoolMOS™ |
Rds Pada (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Power Disipasi (Max): | 25W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Nama lain: | SP000013516 SPB02N60C3 SPB02N60C3ATMA1TR SPB02N60C3INTR SPB02N60C3INTR-ND SPB02N60C3XT SPB02N60C3XT-ND |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
Detil Deskripsi: | N-Channel 650V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2 |
Current - Continuous Drain (Id) @ 25 ° C: | 1.8A (Tc) |
Email: | [email protected] |