PMDPB56XN,115
PMDPB56XN,115
Artikelnummer:
PMDPB56XN,115
Hersteller:
NXP Semiconductors / Freescale
Beschreibung:
MOSFET 2N-CH 30V 3.1A HUSON6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
61941 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PMDPB56XN,115.pdf

Einführung

We can supply PMDPB56XN,115, use the request quote form to request PMDPB56XN,115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMDPB56XN,115.The price and lead time for PMDPB56XN,115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMDPB56XN,115.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:DFN2020-6
Serie:-
Rds On (Max) @ Id, Vgs:73 mOhm @ 3.1A, 4.5V
Leistung - max:510mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-UDFN Exposed Pad
Andere Namen:568-10760-2
934066487115
PMDPB56XN,115-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:170pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:2.9nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 3.1A 510mW Surface Mount DFN2020-6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.1A
Email:[email protected]

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