PMDPB30XN,115
PMDPB30XN,115
Artikelnummer:
PMDPB30XN,115
Hersteller:
Nexperia
Beschreibung:
MOSFET 2N-CH 20V 4A 6HUSON
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
17218 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PMDPB30XN,115.pdf

Einführung

We can supply PMDPB30XN,115, use the request quote form to request PMDPB30XN,115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMDPB30XN,115.The price and lead time for PMDPB30XN,115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMDPB30XN,115.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:900mV @ 250µA
Supplier Device-Gehäuse:6-HUSON-EP (2x2)
Serie:-
Rds On (Max) @ Id, Vgs:40 mOhm @ 3A, 4.5V
Leistung - max:490mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-UDFN Exposed Pad
Andere Namen:1727-1328-2
568-10756-2
568-10756-2-ND
934066581115
PMDPB30XN,115-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:16 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:660pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:21.7nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 4A 490mW Surface Mount 6-HUSON-EP (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A
Email:[email protected]

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