Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Transistor-Typ: | PNP - Pre-Biased |
Supplier Device-Gehäuse: | TO-236AB (SOT23) |
Serie: | - |
Widerstand - Emitterbasis (R2): | 100 kOhms |
Widerstand - Basis (R1): | 100 kOhms |
Leistung - max: | 250mW |
Verpackung: | Cut Tape (CT) |
Verpackung / Gehäuse: | TO-236-3, SC-59, SOT-23-3 |
Andere Namen: | 1727-3011-1 568-2109-1 568-2109-1-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 250mW Surface Mount TO-236AB (SOT23) |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 80 @ 5mA, 5V |
Strom - Collector Cutoff (Max): | 100nA (ICBO) |
Strom - Kollektor (Ic) (max): | 20mA |
Basisteilenummer: | PDTA115 |
Email: | [email protected] |