PBRN123YS,126
PBRN123YS,126
Artikelnummer:
PBRN123YS,126
Hersteller:
NXP Semiconductors / Freescale
Beschreibung:
TRANS PREBIAS NPN 0.7W TO92-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
65478 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PBRN123YS,126.pdf

Einführung

We can supply PBRN123YS,126, use the request quote form to request PBRN123YS,126 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PBRN123YS,126.The price and lead time for PBRN123YS,126 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PBRN123YS,126.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):40V
VCE Sättigung (Max) @ Ib, Ic:1.15V @ 8mA, 800mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:TO-92-3
Serie:-
Widerstand - Emitterbasis (R2):10 kOhms
Widerstand - Basis (R1):2.2 kOhms
Leistung - max:700mW
Verpackung:Tape & Box (TB)
Verpackung / Gehäuse:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Andere Namen:934059138126
PBRN123YS AMO
PBRN123YS AMO-ND
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:500 @ 300mA, 5V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):800mA
Basisteilenummer:PBRN123
Email:[email protected]

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