NTZD3155CT2G
NTZD3155CT2G
Artikelnummer:
NTZD3155CT2G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N/P-CH 20V SOT-563
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
76779 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTZD3155CT2G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:SOT-563
Serie:-
Rds On (Max) @ Id, Vgs:550 mOhm @ 540mA, 4.5V
Leistung - max:250mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-563, SOT-666
Andere Namen:NTZD3155CT2G-ND
NTZD3155CT2GOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:46 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 4.5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:540mA, 430mA
Basisteilenummer:NTZD3155C
Email:[email protected]

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