NTQD6866R2
Artikelnummer:
NTQD6866R2
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 20V 4.7A 8TSSOP
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
31359 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTQD6866R2.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.2V @ 250µA
Supplier Device-Gehäuse:8-TSSOP
Serie:-
Rds On (Max) @ Id, Vgs:32 mOhm @ 6.9A, 4.5V
Leistung - max:940mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-TSSOP (0.173", 4.40mm Width)
Andere Namen:NTQD6866R2OS
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:1400pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 4.7A 940mW Surface Mount 8-TSSOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.7A
Email:[email protected]

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