NTLJD3119CTAG
NTLJD3119CTAG
Artikelnummer:
NTLJD3119CTAG
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N/P-CH 20V 6WDFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30663 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTLJD3119CTAG.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:6-WDFN (2x2)
Serie:µCool™
Rds On (Max) @ Id, Vgs:65 mOhm @ 3.8A, 4.5V
Leistung - max:710mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-WDFN Exposed Pad
Andere Namen:NTLJD3119CTAG-ND
NTLJD3119CTAGOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:3.7nC @ 4.5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 20V 2.6A, 2.3A 710mW Surface Mount 6-WDFN (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.6A, 2.3A
Basisteilenummer:NTLJD3119C
Email:[email protected]

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