NSM11156DW6T1G
NSM11156DW6T1G
Artikelnummer:
NSM11156DW6T1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS PNP PREBIAS/PNP 0.23W SC88
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
23875 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSM11156DW6T1G.pdf

Einführung

We can supply NSM11156DW6T1G, use the request quote form to request NSM11156DW6T1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSM11156DW6T1G.The price and lead time for NSM11156DW6T1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSM11156DW6T1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V, 65V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Transistor-Typ:1 PNP Pre-Biased, 1 PNP
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Widerstand - Emitterbasis (R2):10 kOhms
Widerstand - Basis (R1):10 kOhms
Leistung - max:230mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363
DC Stromgewinn (HFE) (Min) @ Ic, VCE:35 @ 5mA, 10V / 220 @ 2mA, 5V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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