NJVNJD35N04T4G
NJVNJD35N04T4G
Artikelnummer:
NJVNJD35N04T4G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS NPN DARL 350V 4A DPAK-4
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
13134 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NJVNJD35N04T4G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):350V
VCE Sättigung (Max) @ Ib, Ic:1.5V @ 20mA, 2A
Transistor-Typ:NPN - Darlington
Supplier Device-Gehäuse:DPAK
Serie:-
Leistung - max:45W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:NJVNJD35N04T4G-ND
NJVNJD35N04T4GOSTR
Betriebstemperatur:-65°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:18 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:90MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK
DC Stromgewinn (HFE) (Min) @ Ic, VCE:2000 @ 2A, 2V
Strom - Collector Cutoff (Max):50µA
Strom - Kollektor (Ic) (max):4A
Basisteilenummer:NJD35N04
Email:[email protected]

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