MMDF2N02ER2
Artikelnummer:
MMDF2N02ER2
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 25V 3.6A 8-SOIC
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
51633 Pieces
Lieferzeit:
1-2 days
Datenblatt:
MMDF2N02ER2.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:100 mOhm @ 2.2A, 10V
Leistung - max:2W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:MMDF2N02ER2OS
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:532pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.6A
Email:[email protected]

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