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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXTT10N100D
IXTT10N100D
IXTT10N100D
Artikelnummer:
IXTT10N100D
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1000V 10A TO-268
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
27214 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTT10N100D.pdf
Anfrage

Einführung

We can supply IXTT10N100D, use the request quote form to request IXTT10N100D pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTT10N100D.The price and lead time for IXTT10N100D depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTT10N100D.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-268
Serie:-
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 10A, 10V
Verlustleistung (max):400W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:130nC @ 10V
Typ FET:N-Channel
FET-Merkmal:Depletion Mode
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 10A (Tc) 400W (Tc) Surface Mount TO-268
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10A (Tc)
Email:[email protected]

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