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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXTT100N25P
IXTT100N25P
IXTT100N25P
Artikelnummer:
IXTT100N25P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 250V 100A TO-268
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
37930 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTT100N25P.pdf
Anfrage

Einführung

We can supply IXTT100N25P, use the request quote form to request IXTT100N25P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTT100N25P.The price and lead time for IXTT100N25P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTT100N25P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-268
Serie:PolarHT™
Rds On (Max) @ Id, Vgs:24 mOhm @ 50A, 10V
Verlustleistung (max):600W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:6300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:185nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):250V
detaillierte Beschreibung:N-Channel 250V 100A (Tc) 600W (Tc) Surface Mount TO-268
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100A (Tc)
Email:[email protected]

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