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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXKC25N80C
IXKC25N80C
Artikelnummer:
IXKC25N80C
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 800V 25A ISOPLUS220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22340 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXKC25N80C.pdf
Anfrage

Einführung

We can supply IXKC25N80C, use the request quote form to request IXKC25N80C pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXKC25N80C.The price and lead time for IXKC25N80C depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXKC25N80C.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 2mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:ISOPLUS220™
Serie:CoolMOS™
Rds On (Max) @ Id, Vgs:150 mOhm @ 18A, 10V
Verlustleistung (max):-
Verpackung:Tube
Verpackung / Gehäuse:ISOPLUS220™
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
Typ FET:N-Channel
FET-Merkmal:Super Junction
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 25A (Tc) Through Hole ISOPLUS220™
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:25A (Tc)
Email:[email protected]

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