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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXKC19N60C5
IXKC19N60C5
Artikelnummer:
IXKC19N60C5
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 600V 19A ISOPLUS220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
37558 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXKC19N60C5.pdf
Anfrage

Einführung

We can supply IXKC19N60C5, use the request quote form to request IXKC19N60C5 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXKC19N60C5.The price and lead time for IXKC19N60C5 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXKC19N60C5.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.5V @ 1.1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:ISOPLUS220™
Serie:CoolMOS™
Rds On (Max) @ Id, Vgs:125 mOhm @ 16A, 10V
Verlustleistung (max):-
Verpackung:Tube
Verpackung / Gehäuse:ISOPLUS220™
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2500pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
Typ FET:N-Channel
FET-Merkmal:Super Junction
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 19A (Tc) Through Hole ISOPLUS220™
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:19A (Tc)
Email:[email protected]

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