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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFT36N50P
IXFT36N50P
IXFT36N50P
Artikelnummer:
IXFT36N50P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 500V 36A TO-268 D3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
41440 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFT36N50P.pdf
Anfrage

Einführung

We can supply IXFT36N50P, use the request quote form to request IXFT36N50P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFT36N50P.The price and lead time for IXFT36N50P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFT36N50P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 4mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-268
Serie:HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs:170 mOhm @ 500mA, 10V
Verlustleistung (max):540W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:93nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):500V
detaillierte Beschreibung:N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount TO-268
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:36A (Tc)
Email:[email protected]

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