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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFN36N110P
IXFN36N110P
IXFN36N110P
Artikelnummer:
IXFN36N110P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1100V 36A SOT-227B
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
36561 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFN36N110P.pdf
Anfrage

Einführung

We can supply IXFN36N110P, use the request quote form to request IXFN36N110P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN36N110P.The price and lead time for IXFN36N110P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN36N110P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:6.5V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-227B
Serie:Polar™
Rds On (Max) @ Id, Vgs:240 mOhm @ 500mA, 10V
Verlustleistung (max):1000W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:SOT-227-4, miniBLOC
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:23000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:350nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1100V
detaillierte Beschreibung:N-Channel 1100V 36A (Tc) 1000W (Tc) Chassis Mount SOT-227B
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:36A (Tc)
Email:[email protected]

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