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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFK20N120
IXFK20N120
IXFK20N120
Artikelnummer:
IXFK20N120
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1200V 20A TO-264
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
47686 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFK20N120.pdf
Anfrage

Einführung

We can supply IXFK20N120, use the request quote form to request IXFK20N120 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFK20N120.The price and lead time for IXFK20N120 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFK20N120.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 8mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264AA (IXFK)
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:750 mOhm @ 500mA, 10V
Verlustleistung (max):780W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:7400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1200V
detaillierte Beschreibung:N-Channel 1200V 20A (Tc) 780W (Tc) Through Hole TO-264AA (IXFK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Tc)
Email:[email protected]

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