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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFK180N10
IXFK180N10
IXFK180N10
Artikelnummer:
IXFK180N10
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 100V 180A TO-264AA
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
45642 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFK180N10.pdf
Anfrage

Einführung

We can supply IXFK180N10, use the request quote form to request IXFK180N10 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFK180N10.The price and lead time for IXFK180N10 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFK180N10.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 8mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264AA (IXFK)
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:8 mOhm @ 90A, 10V
Verlustleistung (max):560W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:10900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:390nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:180A (Tc)
Email:[email protected]

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