IPP13N03LB G
IPP13N03LB G
Artikelnummer:
IPP13N03LB G
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 30V 30A TO-220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
75087 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IPP13N03LB G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 20µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-TO220-3-1
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:12.8 mOhm @ 30A, 10V
Verlustleistung (max):52W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:IPP13N03LB G-ND
IPP13N03LBG
IPP13N03LBGX
SP000064224
SP000680872
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1355pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:10nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:30A (Tc)
Email:[email protected]

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