IPP12CN10LGXKSA1
IPP12CN10LGXKSA1
Artikelnummer:
IPP12CN10LGXKSA1
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 100V 69A TO220-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
35946 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IPP12CN10LGXKSA1.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.4V @ 83µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-TO-220-3
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:12 mOhm @ 69A, 10V
Verlustleistung (max):125W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:IPP12CN10L G
IPP12CN10L G-ND
IPP12CN10LG
SP000680864
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5600pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 69A (Tc) 125W (Tc) Through Hole PG-TO-220-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:69A (Tc)
Email:[email protected]

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