IPI06CN10N G
IPI06CN10N G
Artikelnummer:
IPI06CN10N G
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 100V 100A TO262-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
28069 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IPI06CN10N G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 180µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-TO262-3
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:6.5 mOhm @ 100A, 10V
Verlustleistung (max):214W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-262-3 Long Leads, I²Pak, TO-262AA
Andere Namen:IPI06CN10N G-ND
IPI06CN10NG
SP000208924
SP000680668
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:9200pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:139nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100A (Tc)
Email:[email protected]

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