IPB12CNE8N G
IPB12CNE8N G
Artikelnummer:
IPB12CNE8N G
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 85V 67A TO263-3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
28629 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IPB12CNE8N G.pdf

Einführung

We can supply IPB12CNE8N G, use the request quote form to request IPB12CNE8N G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB12CNE8N G.The price and lead time for IPB12CNE8N G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPB12CNE8N G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D²PAK (TO-263AB)
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:12.9 mOhm @ 67A, 10V
Verlustleistung (max):125W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:IPB12CNE8N G-ND
IPB12CNE8NG
SP000096451
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4340pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):85V
detaillierte Beschreibung:N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:67A (Tc)
Email:[email protected]

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