HN2C01FU-GR(T5L,F)
HN2C01FU-GR(T5L,F)
Artikelnummer:
HN2C01FU-GR(T5L,F)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS 2NPN 50V 0.15A US6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
21138 Pieces
Lieferzeit:
1-2 days
Datenblatt:
HN2C01FU-GR(T5L,F).pdf

Einführung

We can supply HN2C01FU-GR(T5L,F), use the request quote form to request HN2C01FU-GR(T5L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN2C01FU-GR(T5L,F).The price and lead time for HN2C01FU-GR(T5L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN2C01FU-GR(T5L,F).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor-Typ:2 NPN (Dual)
Supplier Device-Gehäuse:US6
Serie:-
Leistung - max:200mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:HN2C01FU-GR(T5LF)TR
Betriebstemperatur:125°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:80MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
DC Stromgewinn (HFE) (Min) @ Ic, VCE:200 @ 2mA, 6V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):150mA
Email:[email protected]

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