HN2A01FE-Y(TE85L,F
HN2A01FE-Y(TE85L,F
Artikelnummer:
HN2A01FE-Y(TE85L,F
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS 2PNP 50V 0.15A ES6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
61215 Pieces
Lieferzeit:
1-2 days
Datenblatt:
HN2A01FE-Y(TE85L,F.pdf

Einführung

We can supply HN2A01FE-Y(TE85L,F, use the request quote form to request HN2A01FE-Y(TE85L,F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN2A01FE-Y(TE85L,F.The price and lead time for HN2A01FE-Y(TE85L,F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN2A01FE-Y(TE85L,F.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistor-Typ:2 PNP (Dual)
Supplier Device-Gehäuse:ES6
Serie:-
Leistung - max:100mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SOT-563, SOT-666
Andere Namen:HN2A01FE-Y(TE85LFCT
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:80MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
DC Stromgewinn (HFE) (Min) @ Ic, VCE:120 @ 2mA, 6V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):150mA
Email:[email protected]

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