GP1M020A060N
GP1M020A060N
Artikelnummer:
GP1M020A060N
Hersteller:
Global Power Technologies Group
Beschreibung:
MOSFET N-CH 600V 20A TO3PN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
45700 Pieces
Lieferzeit:
1-2 days
Datenblatt:
GP1M020A060N.pdf

Einführung

We can supply GP1M020A060N, use the request quote form to request GP1M020A060N pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP1M020A060N.The price and lead time for GP1M020A060N depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP1M020A060N.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PN
Serie:-
Rds On (Max) @ Id, Vgs:330 mOhm @ 10A, 10V
Verlustleistung (max):347W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-3P-3, SC-65-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2097pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:76nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 20A (Tc) 347W (Tc) Through Hole TO-3PN
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Tc)
Email:[email protected]

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