GP1M013A050H
GP1M013A050H
Artikelnummer:
GP1M013A050H
Hersteller:
Global Power Technologies Group
Beschreibung:
MOSFET N-CH 500V 13A TO220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
13346 Pieces
Lieferzeit:
1-2 days
Datenblatt:
GP1M013A050H.pdf

Einführung

We can supply GP1M013A050H, use the request quote form to request GP1M013A050H pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP1M013A050H.The price and lead time for GP1M013A050H depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP1M013A050H.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220
Serie:-
Rds On (Max) @ Id, Vgs:480 mOhm @ 6.5A, 10V
Verlustleistung (max):183W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:1560-1181-1
1560-1181-1-ND
1560-1181-5
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1918pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):500V
detaillierte Beschreibung:N-Channel 500V 13A (Tc) 183W (Tc) Through Hole TO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:13A (Tc)
Email:[email protected]

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