FGA70N30TDTU
FGA70N30TDTU
Artikelnummer:
FGA70N30TDTU
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
IGBT 300V 201W TO3P
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
18757 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FGA70N30TDTU.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):300V
VCE (on) (Max) @ Vge, Ic:1.5V @ 15V, 20A
Testbedingung:-
Td (ein / aus) bei 25 ° C:-
Schaltenergie:-
Supplier Device-Gehäuse:TO-3PN
Serie:-
Rückwärts-Erholzeit (Trr):21ns
Leistung - max:201W
Verpackung:Tube
Verpackung / Gehäuse:TO-3P-3, SC-65-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:Trench
Gate-Ladung:125nC
detaillierte Beschreibung:IGBT Trench 300V 201W Through Hole TO-3PN
Strom - Collector Pulsed (Icm):160A
Email:[email protected]

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