FDS6892AZ
FDS6892AZ
Artikelnummer:
FDS6892AZ
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 20V 7.5A 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
34401 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDS6892AZ.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:18 mOhm @ 7.5A, 4.5V
Leistung - max:900mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1286pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7.5A
Email:[email protected]

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