FDS6690A_NBBM015A
FDS6690A_NBBM015A
Artikelnummer:
FDS6690A_NBBM015A
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
47046 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDS6690A_NBBM015A.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SO
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:12.5 mOhm @ 11A, 10V
Verlustleistung (max):2.5W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1205pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11A (Ta)
Email:[email protected]

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