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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > DMG4N65CT
DMG4N65CT
Artikelnummer:
DMG4N65CT
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N CH 650V 4A TO220-3
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS-konform
verfügbare Anzahl:
58762 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG4N65CT.pdf
Anfrage

Einführung

We can supply DMG4N65CT, use the request quote form to request DMG4N65CT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG4N65CT.The price and lead time for DMG4N65CT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG4N65CT.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220-3
Serie:-
Rds On (Max) @ Id, Vgs:3 Ohm @ 2A, 10V
Verlustleistung (max):2.19W (Ta)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:DMG4N65CTDI
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:16 Weeks
Bleifreier Status / RoHS-Status:Contains lead / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:13.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 4A (Tc) 2.19W (Ta) Through Hole TO-220-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Tc)
Email:[email protected]

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