DMG4N60SK3-13
DMG4N60SK3-13
Artikelnummer:
DMG4N60SK3-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET BVDSS: 501V 650V TO252 T&
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS-konform
verfügbare Anzahl:
42964 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG4N60SK3-13.pdf

Einführung

We can supply DMG4N60SK3-13, use the request quote form to request DMG4N60SK3-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG4N60SK3-13.The price and lead time for DMG4N60SK3-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG4N60SK3-13.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252
Serie:-
Rds On (Max) @ Id, Vgs:2.3 Ohm @ 2A, 10V
Verlustleistung (max):48W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:DMG4N60SK3-13DITR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:30 Weeks
Bleifreier Status / RoHS-Status:Contains lead / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:532pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:14.3nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 3.7A (Tc) 48W (Ta) Surface Mount TO-252
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.7A (Tc)
Email:[email protected]

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