BSM300D12P2E001
BSM300D12P2E001
Artikelnummer:
BSM300D12P2E001
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET 2N-CH 1200V 300A
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
42992 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.BSM300D12P2E001.pdf2.BSM300D12P2E001.pdf

Einführung

We can supply BSM300D12P2E001, use the request quote form to request BSM300D12P2E001 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSM300D12P2E001.The price and lead time for BSM300D12P2E001 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSM300D12P2E001.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 68mA
Supplier Device-Gehäuse:Module
Serie:-
Rds On (Max) @ Id, Vgs:-
Leistung - max:1875W
Verpackung:Tray
Verpackung / Gehäuse:Module
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:35000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Silicon Carbide (SiC)
Drain-Source-Spannung (Vdss):1200V (1.2kV)
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 300A (Tc) 1875W Chassis Mount Module
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:300A (Tc)
Email:[email protected]

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