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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Arrays > APTM100A13SCG
APTM100A13SCG
APTM100A13SCG
Artikelnummer:
APTM100A13SCG
Hersteller:
Microsemi
Beschreibung:
MOSFET 2N-CH 1000V 65A SP6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
6324 Pieces
Lieferzeit:
1-2 days
Datenblatt:
APTM100A13SCG.pdf
Anfrage

Einführung

We can supply APTM100A13SCG, use the request quote form to request APTM100A13SCG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM100A13SCG.The price and lead time for APTM100A13SCG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM100A13SCG.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 6mA
Supplier Device-Gehäuse:SP6
Serie:-
Rds On (Max) @ Id, Vgs:156 mOhm @ 32.5A, 10V
Leistung - max:1250W
Verpackung:Bulk
Verpackung / Gehäuse:SP6
Andere Namen:APTM100A13SCGMI
APTM100A13SCGMI-ND
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:15200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:562nC @ 10V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):1000V (1kV)
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:65A
Email:[email protected]

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