2SA1954BTE85LF
2SA1954BTE85LF
Artikelnummer:
2SA1954BTE85LF
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS PNP 12V 0.5A USM
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
60503 Pieces
Lieferzeit:
1-2 days
Datenblatt:
2SA1954BTE85LF.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):12V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 10mA, 200mA
Transistor-Typ:PNP
Supplier Device-Gehäuse:USM
Serie:-
Leistung - max:100mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SC-70, SOT-323
Andere Namen:2SA1954BTE85LFCT
Betriebstemperatur:125°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:130MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor PNP 12V 500mA 130MHz 100mW Surface Mount USM
DC Stromgewinn (HFE) (Min) @ Ic, VCE:500 @ 10mA, 2V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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