GT10J312(Q)
Part Number:
GT10J312(Q)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
40771 Pieces
Delivery Time:
1-2 days
Data sheet:
GT10J312(Q).pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:300V, 10A, 100 Ohm, 15V
Td (on/off) @ 25°C:400ns/400ns
Switching Energy:-
Supplier Device Package:TO-220SM
Series:-
Reverse Recovery Time (trr):200ns
Power - Max:60W
Packaging:Tube
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Detailed Description:IGBT 600V 10A 60W Surface Mount TO-220SM
Current - Collector Pulsed (Icm):20A
Current - Collector (Ic) (Max):10A
Base Part Number:GT10
Email:[email protected]

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