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EPC8009ENGR
- Part Number:
- EPC8009ENGR
- Manufacturer:
- EPC
- Description:
- TRANS GAN 65V 4.1A BUMPED DIE
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 44951 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- 1.EPC8009ENGR.pdf2.EPC8009ENGR.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Test: | 47pF @ 32.5V |
| Voltage - Breakdown: | Die |
| Vgs(th) (Max) @ Id: | 138 mOhm @ 500mA, 5V |
| Technology: | GaNFET (Gallium Nitride) |
| Series: | eGaN® |
| RoHS Status: | Tray |
| Rds On (Max) @ Id, Vgs: | 4.1A (Ta) |
| Polarization: | Die |
| Other Names: | 917-EPC8009ENGR EPC8009ENGG |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | EPC8009ENGR |
| Input Capacitance (Ciss) (Max) @ Vds: | 0.38nC @ 5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 65V 4.1A (Ta) Surface Mount Die |
| Drain to Source Voltage (Vdss): | - |
| Description: | TRANS GAN 65V 4.1A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C: | 65V |
| Capacitance Ratio: | - |
| Email: | [email protected] |
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